| 摘要 |
PURPOSE:To manufacture a metallic gate IC through a self-alignment technique by forming source-drain regions while using a silicon nitride film as a mask and forming a gate oxide film and a metallic gate. CONSTITUTION:A silicon thermal oxide film 2 is grown on a substrate 1, a mask 3 consisting of a silicon nitride film is formed, and silicon oxide films 4 are formed through thermal oxidation. The mask 3 and the oxide film 2 except a gate region are removed, and a source region 5 and a drain region 6 are shaped through ion implantation. The surface of the substrate 1 is thermally oxidized to form a silicon oxide film 7, the mask 3 is removed, and a gate oxide film 8 is formed through thermal oxidation again. Contact holes 9, 10 are shaped to the oxide film 7, and a metal is evaporated to form a source electrode 11, a drain electrode 12 and a gate electrode 13. Accordingly, a metallic gate MOSIC can be manufactured by using a substantial self-alignment technique. |
