| 摘要 |
The present invention is a method for manufacturing an SOI wafer having: (a) a step for forming a thermal oxide film on a surface of an SOI layer of an SOI wafer by performing a heat treatment in an oxidizing gaseous atmosphere; (b) a step for measuring the film thickness of the SOI layer after the thermal oxide film is formed; (c) a batch-type cleaning step for adjusting the etched amount of the SOI layer in accordance with the SOI layer film thickness measured in step (b), thereby causing the SOI layer after the SOI layer was etched using batch-type cleaning to be adjusted to a film thickness exceeding a target value; (d) a step for measuring the film thickness of the SOI layer after the batch-type cleaning step; and (e) a single wafer cleaning step for adjusting the etched amount of the SOI layer in accordance with the SOI layer film thickness measured in step (d), thereby causing the SOI layer after being etched using single wafer cleaning to be adjusted to the target value film thickness. The thermal oxide film formed in step (a) is removed before or after step (b). What is thereby provided is a method for manufacturing an SOI making it possible to manufacture an SOI wafer having exceptional uniformity in SOI layer film thickness. |
