发明名称 |
SPUTTERING A PIN AMORPHOUS SILICON DEVICE |
摘要 |
A high efficiency amorphous silicon PIN semiconductor device having partially crystallized (microcrystalline) P and N layers is constructed by the sequential sputtering of N, I and P layers and at least one semi-transparent ohmic electrode. The method of construction produces a PIN device, exhibiting enhanced electrical and optical properties, improved physical integrity, and facilitates the preparation in a singular vacuum system and vacuum pump down procedure. |
申请公布号 |
AU3350684(A) |
申请公布日期 |
1985.04.04 |
申请号 |
AU19840033506 |
申请日期 |
1984.09.25 |
申请人 |
EXXON RESEARCH AND ENGINEERING CO. |
发明人 |
THEODORE DEMETRI MOUSTAKAS;HERBERT PAUL MARUSKA |
分类号 |
H01L31/04;H01L21/203;H01L29/04;H01L29/868;H01L31/0392;H01L31/075;H01L31/20 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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