发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent a pattern breaking in a thin-film and a disconnection through side-etching in a flat section by coating a section side-etched with a mask material during a time when the side-etching of a section having thin film thickness does not progress. CONSTITUTION:A thin-film 23 is etched while using a photo-resist film as a mask. The etching is suspended at that time under the state in which the thin- film 23 in a stepped section 25 is not side-etched remarkably. A side surface is coated completely with a photo-resist including a section side-etched in the stepped section 25. The thin-film 23 in a flat section is patterned completely while using the photo-resist as a mask.
申请公布号 JPS6064435(A) 申请公布日期 1985.04.13
申请号 JP19830172553 申请日期 1983.09.19
申请人 NIPPON DENKI KK 发明人 AIZAWA TAKASHI
分类号 H01L21/302;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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