发明名称 Three-Dimensional Chip Stack and Method of Forming the Same
摘要 A three-dimensional chip stack includes a first chip bonded to a second chip to form an electrical interconnection therebetween. The bonded interconnection includes a first conductive pillar overlying a first substrate of the first chip, a second conductive pillar overlying a second substrate of the second chip, and a joint structure between the first conductive pillar and the second conductive pillar. The joint structure includes a first IMC region adjacent to the first conductive pillar, a second IMC region adjacent to the second conductive pillar, and a metallization layer between the first IMC region and the second IMC region.
申请公布号 US2016276315(A1) 申请公布日期 2016.09.22
申请号 US201615167904 申请日期 2016.05.27
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Wei-Ming;Hsieh Cheng-Hsien;Huang Sung-Hui;Hsu Kuo-Ching
分类号 H01L25/065;H01L23/00;H01L23/538 主分类号 H01L25/065
代理机构 代理人
主权项 1. A structure, comprising: a first substrate and a second substrate; a first conductive pillar over the first substrate, and a second conductive pillar over the second substrate, the first substrate coupled to the second substrate through the respective conductive pillars to form a bonded interconnection therebetween; and a metallization layer between the first conductive pillar and the second conductive pillar, the metallization layer defining a first face and a second face, the bonded interconnection comprising a first joint structure between the first conductive pillar and the first face of the metallization layer, the bonded interconnection further comprising a second joint structure between the second conductive pillar and the second face of the metallization layer, wherein material of the metallization layer has a higher melting point than material of the first joint structure or material of the second joint structure.
地址 Hsin-Chu TW
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