发明名称 |
Three-Dimensional Chip Stack and Method of Forming the Same |
摘要 |
A three-dimensional chip stack includes a first chip bonded to a second chip to form an electrical interconnection therebetween. The bonded interconnection includes a first conductive pillar overlying a first substrate of the first chip, a second conductive pillar overlying a second substrate of the second chip, and a joint structure between the first conductive pillar and the second conductive pillar. The joint structure includes a first IMC region adjacent to the first conductive pillar, a second IMC region adjacent to the second conductive pillar, and a metallization layer between the first IMC region and the second IMC region. |
申请公布号 |
US2016276315(A1) |
申请公布日期 |
2016.09.22 |
申请号 |
US201615167904 |
申请日期 |
2016.05.27 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Wei-Ming;Hsieh Cheng-Hsien;Huang Sung-Hui;Hsu Kuo-Ching |
分类号 |
H01L25/065;H01L23/00;H01L23/538 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
1. A structure, comprising:
a first substrate and a second substrate; a first conductive pillar over the first substrate, and a second conductive pillar over the second substrate, the first substrate coupled to the second substrate through the respective conductive pillars to form a bonded interconnection therebetween; and a metallization layer between the first conductive pillar and the second conductive pillar, the metallization layer defining a first face and a second face, the bonded interconnection comprising a first joint structure between the first conductive pillar and the first face of the metallization layer, the bonded interconnection further comprising a second joint structure between the second conductive pillar and the second face of the metallization layer, wherein material of the metallization layer has a higher melting point than material of the first joint structure or material of the second joint structure. |
地址 |
Hsin-Chu TW |