| 摘要 |
PURPOSE:To eliminate the adverse influence of a semiconductor substrate by forming a P type low density buffer layer, a buffer layer region which has two layers of the P type buffer layer and another buffer layer hetero bonded to the P type buffer layer and electrodes on the substrate which has high density active layer. CONSTITUTION:An iron-doped P<-> type GaAs buffer layer 11 is formed by vapor phase growing method on a semi-insulating GaAs substrate 10, and a GaAlAs buffer layer 12 of hetero junction and a GaAs active layer 13 are continuously grown. Then, an aluminum film 21 which becomes a gate electrode formed by an aluminum side etching method using a photoresist is formed on a mesa, AuGeNi layer 22 which become source and drain electrodes are laminated, and alloyed. Then, electrode wirings 23 for connecting the source and drain electrodes to be formed next via bonding pads are formed, and an Au film 24 and the gate are bonded. Thus, the emission of electrons on the surface of the layer 13 can be reduced to eliminate the adverse influence of the substrate 10. |
