| 摘要 |
PURPOSE:To enhance photosensitivity in all the visible light region, especially, matching degree with a semiconductor laser, and light responsivity by using an amorphous material composed essentially of silicon and germanium contg. H and halogen for electrophotographic photoconductive member, etc. CONSTITUTION:The first photoconductive layer 102 and the second layer 103 having a free surface 106 are formed on the conductive substrate 101 to form a photoconductive member 100. The first layer 102 has a layer structure of the first layer region 104 made of an amorphous material contg. Ge, Si, H, etc., and the second photoconductive layer region 105 made of a-Si(H,X) in this order. When the region 104 contains Si, chemical stability can be obtained in the interface with the region 105 by the presence of Si in it. C is incorporated in the first layer 102 in order to enhance photosensitivity and dark resistance, and further, adhesion between the substrate 101 and the layer 102. The second layer 103 is made of an amorphous material contg. Si and O and it is formed mainly in order to enhance humidity resistance, successive repeated use characteristics, high voltage resistance, use environment resistance, and durability. |
