| 摘要 |
PURPOSE:To rapidly suppress a leakage current by sequentially laminating the first reverse conductive type or undoped semiconductor layer to a substrate, and the same conductive type second semiconductor layer as the substrate on the substrate at both sides of mesa stripe. CONSTITUTION:A current block layer 13 is formed on a substrate 1 at the side of a mesa stripe 1a, and the same conductive type clad layer 14 as the substrate 1 is formed on the layer 13. In this conductive type, the junction of the layers 14, 14 is formed in P-N junction, and the junction of the layers 13, 14 operates as a diode to interrupt the leakage current. |
