| 摘要 |
PURPOSE:To equalize the thickness and quality of a thin film formed on a thin film by repeatedly performing an operation for growing the thin film in a vapor phase and an operation for stopping the growth. CONSTITUTION:A substrate 4 disposed in a reaction chamber 1 is heated, the chamber 1 is evacuated through an exhaust system 2 to a vacuum state. Reaction gases are fed from gas inlet systems 3a-3c in this state, and the evacuation by the system 2 is temporarily stopped. Then, the reaction gas in the chamber 2 is sealed under the prescribed pressure. Reaction is performed through reaction exciting means 6 in this state, and the desired thin film is grown on the substrate 4. On the other hand, the gas in the chamber 1 is raised at the temperature as the time goes, and vapor phase decomposition starts at the prescribed temperature or higher. When the gas is evacuated again in the chamber before decomposing the gas, and inert gas is simultaneously introduced into the chamber 1 to stop the growth of the film. Then, the chamber 1 is again evacuated, and similar operations are repeated. Thus, the thickness and quality of the thin film can be equalized. |
