| 摘要 |
PURPOSE:To shorten a distance between adjacent groove-shaped capacitors remarkably by connecting electrodes buried to the inner surfaces of groove sections in the groove-shaped capacitors through insulating films for the capacitors to either one of source and drain regions in a transfer transistor. CONSTITUTION:A transfer transistor 33b consists of N<+> type source-drain regions 34b, 35b, a gate oxide film 36b and a gate electrode 37b. An electrode 28b constituting a thin-type capacitor 25b is brought into buried-contact with the region 34b through a contact hole 38b bored to a gate oxide film 36b. Accordingly, a semiconductor memory device, which has the thin-type capacitors having long memory holding time, in which a distance between the adjacent thin- type capacitors is shortened remarkably without generating a punch-through phenomenon and the density of a memory cell can be increased and which has high reliability and high density, can be manufactured.
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