| 摘要 |
PURPOSE:To simplify the wiring by marked reduction of wiring density, and thus to contrive the improvement of reliability by enabling marked reduction of the number of cross-over only to one, by a method wherein diffused type strain gauges are formed on both surfaces, and a part of the strain gauges is replaced by a through-diffused layer and an Si substrate. CONSTITUTION:Epitaxial layers 37 and 37 are formed on two surfaces front and back of the single crystal Si substrate 36, and the diffused type strain gauges 23 and 23 are formed in the neighborhood of the surfaces of the layers 37 and 37 of both the surfaces; further, through diffused layers 38 and 38 reaching the substrate 36 by penetrating through these layers 37 and 37 are formed. A diffused strain gauge 23 or a metallic thin film wiring 24 of a bonding pad 25 is connected to the Si substrate 36 via these through-diffused layers 38, and the strain gauge 23 is directly connected to the substrate 36. Thereby, diffused type strain gauges 23 and 23 on both surfaces are electrically connected to the bonding pad 25 on one surface through three through-diffused layers 38, 38, and 38 and the common Si substrate 36. |
