| 摘要 |
<p>The transistor has a single crystal silicon substrate having a major plane surface deviating by an angle within the range from substantially 22 DEG to substantially 34 DEG with respect to the (1,0,0) crystallographic surface, towards the (1, 1, 1) crystallographic surface.
<??>A silicon epitaxial layer may be formed on the silicon substrate, which acts as a base plate.</p> |
