| 摘要 |
PURPOSE:To enable to change the resistivity of the resistive element into a variable one without increasing the area of the chip by a method wherein an MOS transistor is constituted of an interlayer insulating film formed on the resistive element region and a wiring forming layer formed on the interlayer inslating film and the gate voltage of this MOS transistor is made to change. CONSTITUTION:An MOS transistor can be constituted in a structure, wherein one side of a sensitive element layer, such as 3, is used as a source and the other side, such as 3', is used as a drain, a wiring forming layer 6 is used as a gate and an interlayer insulating film 4 is used as a gate insulating film. According to such a way, a resistor of a variable sensitivity results in being placed in parallel with a conventional semiconductor resistive element by making the gate voltage of the MOS transistor change, thereby enabling to change the resistance. |
