发明名称 SEMICONDUCTOR LASER-ARRAY DEVICE
摘要 PURPOSE:To provide with an improved yield a laser-array device capable of generating a phase-synchronized high-energy beam by a method wherein passive waveguides are provided between active waveguides and the end faces of the active waveguides are different from the end faces of the passive waveguides in reflectivity. CONSTITUTION:Resistive electrodes 8, 9 are built on the substrate and on the grown layers, respectively, and the end faces are exposed by cleavage. The end faces are coated with non-reflection films 102 and the end faces of active waveguides 10 are further provided by evaporation with metal films 101 of Cr, Au, or the like, for a 100% reflectivity. As for the difference between the elements in terms of the transverse refraction index, it will be larger in an active waveguide 10 than the reduction (DELTAnfcapprox.= 10<-3>) of the refractive index due to carrier injection. In a passive waveguide 11, there will be a difference in refractive indices (DELTAnapprox.=5X10<-4>) that is great enough to guide optical beams of the TE mode. With the device designed as such, there will be a 90 deg. deviation in phase between the photoelectric fields respectively of the passive waveguides 11 and active waveguides 10. With the reflectivity at the end faces 101, 102 being respectively 100%, 0%, there will be another 90 deg. phase deviation in the electric field under the environmental conditions surrounding the end faces 101, 102.
申请公布号 JPS60214580(A) 申请公布日期 1985.10.26
申请号 JP19840072202 申请日期 1984.04.10
申请人 SHARP KK 发明人 TANETANI MOTOTAKA;MATSUI KANEKI;YAMAMOTO SABUROU;YANO MORICHIKA
分类号 H01S5/00;H01S5/028;H01S5/40 主分类号 H01S5/00
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