| 摘要 |
PURPOSE:To enable to eliminate the irregular reflection generating on the corner part of an element region and to prevent the occurrence of troubles such as the irreqularity in diffusion resistance value, the opening of a diffusion wiring and the like by a method wherein a means is contrived for the shape of a resist mask. CONSTITUTION:An exposing process is performed through a gate oxide film 3 using a large chromium mask 10 of plane shape. As a light irradiation is not performed on the stepped part of a field oxide film 2, a resist aperture part can be formed in such a manner that the resist 11 after development will have the plane form same as a chromium mask 10. As a negative resist 11 is coated on a PMOS region, the diffusion of N type impurities can be prevented, and pertaining to the NMOS region, no N type impurities come into the region covered by a field oxide film 2 and a gate electrode 4, and a source and drain 12 diffusion can be performed only on the semiconductor substrate 1 which is not covered by the electrode 4 under the gate oxide film 3. |
