| 摘要 |
A reduction projection aligner system wherein a pattern on a reticle (2 min ) is formed directly on a wafer (4) by reducing, projecting and printing it, includes means (9) to optically magnify and project and then focus a positioning pattern on the wafer (4), means (11, 12) to scan the focused plane with a slit (10), means (13) to measure a distance from a mechanical origin provided on the body of the system to the positioning pattern on the wafer (4) on the basis of a movement of the slit (10), and means to relatively move and position the reticle (2 min ) having the pattern to be formed anew, so as to coincide with a position of the wafer (4) relative to the body of the system. |
