发明名称 |
PROCEDIMENTO PER LA FABBRICAZIONE DI DISPOSITIVI SEMICONDUTTORI |
摘要 |
An extremely short channel Field Effect Transistor(FET) is made by making a first ion implant through a polysilicon mask aperture, converting the surface of the polysilicon into SiO2 to constrict the aperture size and then making a second ion implant of the opposite type impurity through the constricted aperture. The SiO2 growth effectively moves the edge of the mask by a small controlled distance. This permits a small controlled spacing between the two ion implants, which is used for defining an extremely short FET channel. Alternatively a bipolar transistor with a narrow base zone can be made by analogous processing. - i |
申请公布号 |
IT1106505(B) |
申请公布日期 |
1985.11.11 |
申请号 |
IT19760069889 |
申请日期 |
1976.12.02 |
申请人 |
WESTERN ELECTRIC CO INCORP |
发明人 |
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分类号 |
H01L29/73;H01L21/033;H01L21/265;H01L21/266;H01L21/321;H01L21/331;H01L21/337;H01L21/8234;H01L27/06;H01L29/10;H01L29/735;H01L29/78;H01L29/80;H01L29/808;(IPC1-7):H01L/ |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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