Complementary logic structure

摘要

The invention relates to integrated circuit technology. A complementary logic structure comprises in particular an n-channel field-effect transistor 1 and a p-type modulated doping field-effect transistor 3, which are formed on a common substrate 5. The n-channel transistor comprises an intrinsic-conductivity layer 7, a p-type layer 9 and an n-type layer 11. The p-channel transistor comprises an intrinsic-conductivity layer 13 and a p-type layer 15. At least one of the electrodes of the n-channel transistor is connected to at least one of the electrodes of the p-channel transistor to form a complementary structure. Application to fast integrated circuits. <IMAGE>