| 摘要 |
PURPOSE:To form a pattern without setting an etching mask on a sample by forming a desired etching pattern on the sample by the effect of an electric field formed by the irregular surface of a conductive sample base of metal or the presence or adsence of metal. CONSTITUTION:When dry etching is performed with a plasma, a desired etching pattern is formed on a sample 1 by the effect of an electric field formed due to the irregular surace of a conductive sample base 4 of metal or the presence or absence of the metal. For example, a sample (quartz plate) 1 is placed on the metal sample base 4 having the irregular surface, and placed in C4F8 plasma by high frequency. At this time, the portion contacted with the projection of the sample base is accelerated at the ions to early etch the quartz, but the ions are less accelerated on the recess. Thus, the quartz is almost not etched. Accordingly, the etching pattern as shown is formed on the sample 1. |
