METHOD FOR MANUFACTURING EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial wafer capable of both suppressing occurrence of a defect in the epitaxial wafer layer and achieving high gettering ability which can getter even a metal impurity with a low diffusion rate and low concentration.SOLUTION: A method for manufacturing an epitaxial wafer for forming an epitaxial layer in a surface layer of a silicon wafer includes the steps of: implanting ions into the silicon wafer; recovering crystallinity of the surface layer of the silicon wafer implanted with the ions by subjecting the silicon wafer to flash lamp anneal treatment; and forming an epitaxial layer on the surface layer in which crystallinity of the silicon wafer is recovered.SELECTED DRAWING: Figure 1