| 摘要 |
PURPOSE:To produce a semiconductor device with reduced hot carriers, by providing a low concentration region of a second conductivity type between a low concentration region of a first conductivity type and a region of the second conductivity type under a gate electrode, and constructing an N<+>-N<->-P<->-P structure. CONSTITUTION:An SiO2 gate oxide film 7 is formed on the surface of a P<-> type Si substrate 1, and B ions are implanted therein to form a P type layer 20. A gate electrode film consisting of a refractory metal such as W or Ti, or a silicide metal thereof is formed and etched to form a gate electrode 8a. A protective insulation film 21 is formed thereon. P<-> type layers 22 and 23 are formed in the layer 20 on the substrate 1 not covered with the electrode 8. N<-> type layers 24 and 25 are formed on the surface of the substrate 1, and then ions of an N type impurity such as As or the like are implanted therein with the use of the side wall 9 as a mask for forming an N<+> type source region 2 and drain region 3. The protective insulation film 21 is then removed with a chemical agent or the like. Thus, an MOSFET of N<+>N<->P<->P structure can be obtained. |
