| 摘要 |
PURPOSE:To form crystal having stable width in high accuracy easily, by setting cuts with small diameters and ones with large diameters in the longer direction at positions given distance from both end of dies at the tip of the capillary dies having a slit. CONSTITUTION:At the tip of the capillary dies 31 and 32 having a slit, the cuts 61 and 62 having small diameters are formed in the longer direction at positions given distance from both the ends, and width of the beltlike silicon crystal 4 is prescribed with a bit of allowance. The cuts 51 and 52 having larger diameters are formed at the outsides of the cuts 61 and 62. When the capillary dies 31 and 32 are immersed in the silicon melt 1 in the quartz crucible 2, and the beltlike silicon crystal is pulled up, the outside cuts 51 and 52 prevent the solidification of the melt from advancing from the die end parts to the central part, and the inside cuts control width of the crystal 4. |
