| 摘要 |
PURPOSE:A pair of structures provided with heaters are arranged above the free horizontal surface of the silicon melt in the crucible and seed crystals are allowed to come down from between the structure to pull up a silicon crystal band, thus enabling the taking-up speed to be increased and the crystal growth to be stabilized for hours. CONSTITUTION:A couple of dies for crystal growth 13a, 13b are set to fixing parts 14a, 14b above the free horizontal surface of the silicon melt 12 in the crucible 11 and the dies are heated by connecting them through the heat shield 16 to the heaters 15a, 15b respectively. The dies 13a, 13b are kept above the melt surface 12 about 3-4mm. high at their lower ends and the seed crystal 17 is allowed to come down from between the dies 13a, 13b until it contacts with the melt 12. This operation raises up the melt 12 to near the seed crystal 17 to form the meniscus 18 so that the solid-liquid interface 19 becomes concave. Then, the seed crystal 17 is pulled up to effect gradual growth of the silicon crystal band 20. |
