| 摘要 |
Integrated semiconductor circuit in complementary circuit logic, in which a doped semiconductor body (1) of a first conductivity type is provided with at least one trough-shaped semiconductor zone of the second conductivity type, and in which at least one circuit element in the semiconductor body and at least one further circuit element in the trough-shaped semiconductor zone or zones are provided. The aim is to protect the circuit against input-side signal voltages which significantly exceed or fall below a voltage range defined by the operating voltage. This is achieved by incorporating a first semiconductor region (6) of the second conductivity type into the semiconductor body (1), by providing a trough-shaped zone (4) of the second conductivity type in the semiconductor body (1), into which zone a second semiconductor region (7) of the first conductivity type is incorporated, and by both semiconductor regions (6, 7) being connected to an input line (5) which is electrically insulated against the semiconductor body (1). The semiconductor body (1) and the trough-shaped zone (4) each are at one of the two potentials defining the operating voltage. In the range of the first semiconductor region (6) a collector region (12) of the second conductivity type is provided, to which the potential of the trough-shaped zone (4) is applied, in the range of the second semiconductor region (7) a collectors region (14) of the first ... Original abstract incomplete. <IMAGE>
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