发明名称 Ion milling device
摘要 The present invention advantageously provides an ion milling device that can set a high-precision processing area with a simple structure. The ion milling device includes a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam. The sample holder includes a first contact surface that contacts an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface.
申请公布号 US9499900(B2) 申请公布日期 2016.11.22
申请号 US201314379805 申请日期 2013.02.18
申请人 Hitachi High-Technologies Corporation 发明人 Kamino Atsushi;Takasu Hisayuki;Muto Hirobumi;Iwaya Toru
分类号 C23C14/30;G01N1/32;H01J37/305;H01J37/20;H01J37/30 主分类号 C23C14/30
代理机构 Miles & Stockbridge P.C. 代理人 Miles & Stockbridge P.C.
主权项 1. An ion milling device comprising: an ion source for irradiating an upper surface of a sample with an ion beam having an optical axis, the sample further comprising a lower surface and a plurality of side surfaces; a sample stage disposed within a vacuum chamber for the sample to be irradiated with the ion beam; a sample holder, to hold the sample, including a first contact surface and a second contact surface; and a mask to partially limit irradiation of the sample with the ion beam, the mask comprising an upper surface, a lower surface and a plurality of side surfaces, wherein the first contact surface contacts a side surface of the sample that is proximate to the optical axis of the ion beam, and the second contact surface contacts a side surface of the mask that is proximate to the optical axis of the ion beam so that the sample is partially exposed from the mask.
地址 Tokyo JP
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