发明名称 |
Ion milling device |
摘要 |
The present invention advantageously provides an ion milling device that can set a high-precision processing area with a simple structure. The ion milling device includes a sample holder that holds a sample and a mask partially restricting irradiation of the sample with an ion beam. The sample holder includes a first contact surface that contacts an end surface of the sample located on a passing orbit side of the ion beam, and a second contact surface that contacts an end surface of the mask so that the mask is located at a position spaced apart from the ion beam more than the first contact surface. |
申请公布号 |
US9499900(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201314379805 |
申请日期 |
2013.02.18 |
申请人 |
Hitachi High-Technologies Corporation |
发明人 |
Kamino Atsushi;Takasu Hisayuki;Muto Hirobumi;Iwaya Toru |
分类号 |
C23C14/30;G01N1/32;H01J37/305;H01J37/20;H01J37/30 |
主分类号 |
C23C14/30 |
代理机构 |
Miles & Stockbridge P.C. |
代理人 |
Miles & Stockbridge P.C. |
主权项 |
1. An ion milling device comprising:
an ion source for irradiating an upper surface of a sample with an ion beam having an optical axis, the sample further comprising a lower surface and a plurality of side surfaces; a sample stage disposed within a vacuum chamber for the sample to be irradiated with the ion beam; a sample holder, to hold the sample, including a first contact surface and a second contact surface; and a mask to partially limit irradiation of the sample with the ion beam, the mask comprising an upper surface, a lower surface and a plurality of side surfaces, wherein the first contact surface contacts a side surface of the sample that is proximate to the optical axis of the ion beam, and the second contact surface contacts a side surface of the mask that is proximate to the optical axis of the ion beam so that the sample is partially exposed from the mask. |
地址 |
Tokyo JP |