发明名称 |
MASQUE DE LITHOGRAPHIE A RAYONS X ET PROCEDE DE FABRICATION DE CELUI-CI |
摘要 |
An X-ray absorber layer in the form of single layer of high melting point metal such as Ta, W is formed with granular crystal grains on a mask substrate, so that an internal stress of the layer is reduced. A fine pattern is formed from the absorber layer by reactive sputter etching using CBrF3 gas as an etchant, so that an X-ray absorber pattern is formed on the mask substrate. The X-ray lithography mask thus fabricated has a fine pattern such as submicron pattern with a high degree of pattern contrast and a high dimensional accuracy.
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申请公布号 |
FR2542882(B1) |
申请公布日期 |
1986.05.02 |
申请号 |
FR19830011817 |
申请日期 |
1983.07.18 |
申请人 |
NIPPON TELEGRAPH TELEPHONE PUBLI |
发明人 |
HIDEO YOSHIHARA, AKIRA OZAWA, MISAO SEKIMOTO ET TOSHIRO ONO |
分类号 |
G03F1/14;G03F1/22;(IPC1-7):G03F7/02;H01L21/312 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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