| 发明名称 | Negative resist composition, method of forming resist pattern and complex | ||
| 摘要 | A negative resist composition including a complex represented by the general formula (1); and a polymerization initiator, in which M represents hafnium (Hf) or zirconium (Zr), X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant (pKa) of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4. [MXnY4-n] (1) | ||
| 申请公布号 | US9499646(B2) | 申请公布日期 | 2016.11.22 |
| 申请号 | US201615153044 | 申请日期 | 2016.05.12 |
| 申请人 | TOKYO OHKA KOGYO CO., LTD. | 发明人 | Yamashita Naoki;Komuro Yoshitaka;Utsumi Yoshiyuki;Shiono Daiju |
| 分类号 | C08F30/04;C07F7/00;C08G18/22;C08F4/12;C08F4/06;C08F4/16;C08F299/04;G03F7/004 | 主分类号 | C08F30/04 |
| 代理机构 | Knobbe Martens Olson & Bear LLP | 代理人 | Knobbe Martens Olson & Bear LLP |
| 主权项 | 1. A complex which is represented by the following general formula (1): [MXnY4-n] (1)wherein M represents hafnium or zirconium, X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant pKa of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4. | ||
| 地址 | Kawasaki-Shi JP | ||