发明名称 TRANSITION DETECTING CIRCUIT
摘要 A transition of an address input of a memory device is detected in a CMOS circuit having a pair of AND gates Or'ed together. One AND gate receives the input bit and a delayed complement of this bit. The other AND gate receives the complement of the input bit and a delayed version of the true bit. The delays are RC circuits with time constants longer than the transition times. The output of the gates uses a pull-up device to restore a zero level after each transition is indicated. A number of these transition detectors may be OR'ed together to monitor all of the address bits of a memory device.
申请公布号 JPS61113186(A) 申请公布日期 1986.05.31
申请号 JP19850151168 申请日期 1985.07.09
申请人 TEXAS INSTR INC 发明人 JIMII DEII CHIRUDAAZU
分类号 G11C11/401;G11C8/18;G11C11/407;G11C11/4076;G11C11/41;H03K5/00;H03K5/1532;H03K5/1534 主分类号 G11C11/401
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