RADIATION-SENSITIVE NEGATIVE RESIST

摘要

A radiation-sensitive negative resist with improved resistance against dry etching and with excellent resolution characteristics is obtained by providing a polymer material which contains vinyl-naphthalene or a compound thereof as a polymeric group. A homopolymer of 1-vinylnaphthalene or 2-vinylnaphthalene or a copolymer of 1- or 2-vinylnaphthalene with chloromethyl, chlorostyrene or glycidyl methacrylate are preferred polymeric materials.