| 摘要 |
PURPOSE:To trim a metal wiring without impairing passivation films, ground insulating films and a semiconductor substrate, by projecting laser light, increas ing the temperature of the first insulating film, applying stress on the metal wiring beneath the films due to the difference in thermal expansion coefficients, thereby expanding metal atoms. CONSTITUTION:On a P-type silicon substrate 1, a field oxide film 2 and a wiring 3 is formed. Then, a CVD film (second insulating film) 4, which is to become a passivation film, is deposited on the entire surface. A hole 5 is provided, and a part of the wiring 3 is exposed. Then, as silicon nitride film (first insulat ing film) 6 is deposited and directly contacted with the wiring 3 in the hole 5. The thermal expansion coefficients alpha(/deg) of the wiring 3 comprising Al alloy, the CVD film 4 and the silicon nitride film 6 are 2.5X10<-3>, 4.0X10<-3> and 5.0X10<-6>, respectively. Then, laser light L is projected on a region including the hole 5 and the region is locally headed to 400-600 deg.C. |
