| 摘要 |
PURPOSE:To detect the peak height of light intensity and to enable monitoring on the site, by receiving a Se-containing specimen in a specimen chamber equipped with a heater and allowing light with a specific wavelength to be incident to Se gassified at temp. lower than the atomizing temp. of Se to measure the absorption thereof. CONSTITUTION:In order to monitor Se on the site in a semiconductor manufacturing apparatus or a waste treatment apparatus using Se, a spectral line with a wavelength of 335nm is allowed to be incident to Se-vapor, which is held to temp. lower than the atomizing temp. of Se, for example, constant temp. of about 450 deg.C in a specimen chamber 2 by a heater 6, from a light emitting source 1 being a hollow cathode lamp through a window 3 and the light issued through a light receiving window 4 is sent to a detector through a monochrometer 5. Corresponding to the concn. of Se in the specimen chamber, an absorbency peak at a wavelength of 335nm becomes high. By this method, the quantitative analysis of Se of a melting furnace for a Se-containing alloy or glass is performed on the site and the analytical result is made utilizable as monitor. |
