| 摘要 |
PURPOSE:To level a substrate and the surface of a U groove by removing an insulating film remaining in regions except a region, in which the U groove is formed, through etching again. CONSTITUTION:A thermal oxide film 2 and a polycrystalline silicon layer 8 are shaped onto the surface of an silicon substrate 1 in succession, a mask pattern 5 coating regions except a U groove region is formed, the silicon layer 8 and the oxide film 2 are etched to shape U grooves 6 to the surface of the substrate, the photo-resist 5 is removed, and the U grooves 6 and the surface of the silicon layer 8 are thermally oxidized. An insulating film 4 having the low melting point is deposited into the U grooves 6 and onto the surface of the substrate 1, the insulating film 4 is softened through heat treatment, and the silicon layer 8 on regions to which the U grooves 6 are shaped is etched until the layer 8 is exposed. The mask pattern 5 covering the exposed region of the silicon layer 8 is formed, and the residual insulating film 4 is removed through etching while using the resist pattern 5 as a mask. The silicon layer 8 and the oxide film 2 remaining on the surface of the substrate 1 are removed, the resist pattern 5 is removed, and the whole is thermosetted again. Accordingly, groove dividing structure is formed with excellent reproducibility, thus allowing integration with high density. |
