Semiconductor memory device having read-modify-write configuration.

摘要

A semiconductor memory device having a read-modify-write (RMW) configuration suitable for modifying a large number of data with high speed and a simple circuit. The RMW configuration includes a data input and output circuit (11, 14, 16) for simultaneously storing or reading a plurality of data into or from the memory cells (MC), a data output circuit (10, 12, 13) for serially reading a plurality of data from the memory cells, and a data modification circuit (15) for successively receiving the plurality of data from the data output circuit, modifying the received data in a predetermined logical operation and transmitting the modified data to the data input and output circuit.