SUBSTRATE USED FOR GROUP III-V NITRIDE GROWTH AND METHOD FOR PREPARATION THEREOF

摘要

A substrate used for III-V-nitride growth and a manufacturing method thereof, the manufacturing method comprising the following steps: 1) providing a growth substrate, and forming on the surface of the growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of the buffer layer; 3) by means of a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on the semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.

主权项

1. A substrate used for III-V-nitride growth at least comprising:
a growth substrate; a buffer layer used for growing a subsequent luminescent epitaxial structure, wherein a lower surface of the buffer layer is combined with a surface of the growth substrate; and a plurality of semiconductor dielectric protrusions arranged at intervals on an upper surface of the buffer layer, bottom surfaces of the protrusions are combined with the upper surface of the buffer layer, and the buffer layer is exposed between protrusions.