PHOTODIODE AND METHOD OF MANUFACTURING THE SAME, AND X-RAY DETECTOR AND METHOD OF MANUFACTURING THE SAME

摘要

A photodiode and a method of manufacturing the same, and an X-ray detector and a method of manufacturing the same are provided. The PIN photodiode includes a first doped layer, a second doped layer and an intrinsic layer between the first and second doped layers, the first doped layer is provided on a source/drain electrode layer of a thin film transistor of the X-ray detector. A heavily-doped region is provided in the second doped layer, has a dosage concentration larger than that of the second doped layer, and is electrically connected with a cathode of the PIN photodiode.

主权项

1. A PIN photodiode for an X-ray detector, the PIN photodiode comprising a first doped layer, a second doped layer and an intrinsic layer between the first and second doped layers stacked in order, and the first doped layer being provided on a source/drain electrode layer of a thin film transistor of the X-ray detector, wherein
a heavily-doped region is provided in the second doped layer, has a doping concentration larger than that of the second doped layer, and is electrically connected with a cathode of the PIN photodiode.