| 发明名称 |
HYBRID CZTSSe PHOTOVOLTAIC DEVICE |
| 摘要 |
A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer. |
| 申请公布号 |
US2016359072(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615234458 |
申请日期 |
2016.08.11 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Gokmen Tayfun;Gunawan Oki;Haight Richard A.;Kim Jeehwan;Mitzi David B.;Winkler Mark T. |
| 分类号 |
H01L31/075;H01L31/0328;H01L31/077 |
主分类号 |
H01L31/075 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A hybrid absorber layer of a photovoltaic device, comprising:
a chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe), wherein the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) is intrinsic; and a first semiconductor layer including Cu—In—Ga—S,Se (CIGSSe), the semiconductor layer having a p-type conductivity, wherein a first surface of the first semiconductor layer is in contact with the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) and a second surface in contact with the first contact. |
| 地址 |
Armonk NY US |
