发明名称 METAL OXIDE SEMICONDUCTOR HAVING EPITAXIAL SOURCE DRAIN REGIONS AND A METHOD OF MANUFACTURING SAME USING DUMMY GATE PROCESS
摘要 A semiconductor device in which sufficient stress can be applied to a channel region due to lattice constant differences.
申请公布号 US2016359042(A1) 申请公布日期 2016.12.08
申请号 US201615236933 申请日期 2016.08.15
申请人 Sony Corporation 发明人 Tateshita Yasushi
分类号 H01L29/78;H01L21/28;H01L29/49;H01L27/092;H01L29/51;H01L29/08 主分类号 H01L29/78
代理机构 代理人
主权项 1. A semiconductor device comprising: a silicon substrate; a gate electrode including at least one metal material over the silicon substrate; a gate insulating film between the gate electrode and the silicon substrate, the gate insulating film including metal oxide, a metal silicate, a metal oxynitride, or a nitrided metal silicate, each of the metal oxide, the metal silicate, the metal oxynitride, and the nitrided metal silicate comprising at least one metal selected from the group consisting of hafnium, lanthanum, aluminum, zirconium, and tantalum; as viewed in a cross section, a sidewall film on both of oppositely facing sides of the gate electrode, as viewed in the cross section, an offset spacer on both of oppositely facing sides of the gate electrode, and between the sidewall film and the gate electrode; mixed crystal layers in recess regions of a surface of the silicon substrate, the recess regions being at both sides of the gate electrode, the mixed crystal layer having a lattice constant different from a lattice constant of silicon; as viewed in the cross section, an insulating film, on both of the oppositely facing sides of the gate electrode, the insulating film not on the gate electrode; and a work function control film including a metal silicon or a metal nitride, between the gate insulating film and the gate electrode.
地址 Tokyo JP