发明名称 |
THRU-SILICON-VIA STRUCTURES |
摘要 |
Stress generation free thru-silicon-via structures with improved performance and reliability and methods of manufacture are provided. The method includes forming a first conductive diffusion barrier liner on an insulator layer within a thru-silicon-via of a wafer material. The method further includes forming a stress absorption layer on the first conductive diffusion barrier. The method further includes forming a second conductive diffusion barrier on the stress absorption layer. The method further includes forming a copper plate on the second conductive diffusion barrier. |
申请公布号 |
US2016358821(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201514733445 |
申请日期 |
2015.06.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN Fen;FAROOQ Mukta G.;GRAAS Carole D.;LIU Xiao Hu |
分类号 |
H01L21/768;H01L23/532;H01L23/48;H01L21/288;H01L21/02 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Armonk NY US |