发明名称 |
VIA FORMATION USING SIDEWALL IMAGE TRANFER PROCESS TO DEFINE LATERAL DIMENSION |
摘要 |
A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided. |
申请公布号 |
US2016358820(A1) |
申请公布日期 |
2016.12.08 |
申请号 |
US201615239178 |
申请日期 |
2016.08.17 |
申请人 |
International Business Machines Corporation ;GLOBALFOUNDRIES, INC. ;STMicroelectronics, Inc. |
发明人 |
Chen Shyng-Tsong;Chi Cheng;Liu Chi-Chun;Mignot Sylvie M.;Mignot Yann A.;Shobha Hosadurga K.;Spooner Terry A.;Wang Wenhui;Xu Yongan |
分类号 |
H01L21/768;H01L23/522;H01L23/528;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a via including:
an elongated conductive body extending through a dielectric layer to an underlying layer; anda pillar on the underlying layer abutting the elongated conductive body to define a lateral dimension of the elongated conductive body. |
地址 |
Armonk NY US |