HYBRID 200 MM/300 MM SEMICONDUCTOR PROCESSING APPARATUSES

摘要

In one aspect, several apparatuses are described that allow a processing chamber designed for plasma-enhanced chemical vapor deposition on 300 mm wafers to be performed on 200 mm wafers. More specifically, a modified pedestal, carrier plate, and showerhead are described that have been designed for 200 mm wafers and are compatible with 300 mm wafer processing chambers. It has further been observed that deposited films using the modified 200 mm apparatuses are comparable in quality with films deposited with the 300 mm devices they replace.

主权项

1. An apparatus for carrying semiconductor wafers, the apparatus comprising,
an annular ring that is between 1 mm and 10 mm thick and that has an outer diameter greater than 300 mm and an inner diameter less than 200 mm; and one or more recesses in a first side of the annular ring, wherein:
the annular ring has a second side that is configured to support a semiconductor wafer, andthe second side is opposite the first side.