Barrier Chemical Mechanical Planarization Slurries Using Ceria-Coated Silica Abrasives

摘要

Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.

主权项

1. A polishing composition comprising:
0.01 wt % to 20 wt % of abrasive selected from the group consisting of composite particles comprising core particles with surfaces covered by nanoparticles; abrasive particles selected from the group consisting of silica, alumina, zirconia, titania, ceria, surface modified inorganic oxide particles, and combinations thereof; and combinations thereof; 0.0001 wt % to 5 wt % of a pH-adjusting agent; 0.0005 wt % to 0.5 wt % of a corrosion inhibitor; and remaining being water; wherein
the core particles are selected from the group consisting of silica, alumina, titania, zirconia, polymer particle, and combinations thereof; and the nanoparticles are selected from the group consisting of zirconium, titanium, iron, manganese, zinc, cerium, yttrium, calcium, magnesium, lanthanum, strontium nanoparticle, and combinations thereof; and the polishing composition has a pH of from about 2 to 11.