| 摘要 |
<p>Semiconductor body (1,3, 5, 7, 9) is prepared and a film (11) is formed on the semiconductor body (1, 3, 5, 7, 9), followed by forming an interconnection layer of aluminum alloy on the insulating film (11). A silicon oxide film (17) is formed on the interconnection layer (15), followed by removing that portion of the silicon oxide film (17) which is situated on a predetermined trimming area of the interconnection layer (15). A silicon nitride film (21) is formed on the whole surface of the resultant structure. An energy beam (L) is directed onto the predetermined trimming area of the interconnection layer (15), causing the interconnection layer (15) to be locally heated to 400 to 600°C whereby atoms in the interconnection layer (15) migrate to permit the interconnection layer (15) to be trimmed.</p> |
