| 摘要 |
PURPOSE:To obtain an Si cavity structure sealed by means of a thin film section by a method wherein the first Si substrate on which a concave section is formed and the second Si substrate on which a thin film layer formed are heated closely in contact with each other, and the second substrate is etched until the thin film layer is exposed. CONSTITUTION:A surface of the first Si substrate 10 is ground and a concave section is formed on the ground surface side. A sensor 12 is formed on the bottom of the concave section 11. A surface of the second Si substrate 20 is ground and a thin film layer 21 is formed on the ground surface to perform the junction. The surface of the substrate 10 and 20 are hydrophilic and the substrate 10 is contacted closely with the substrate 20, and then they are joined by heating at 200 deg.C in such a state. The substrate 20 is etched until the thin film layer 21 is exposed on the back of the substrate 20. Thereby, an Si cavity structure is obtained being sealed by means of the thin film layer 21. |
