Solid state imaging apparatus, production method thereof and electronic device

摘要

A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.

主权项

1. A solid state imaging apparatus, comprising:
a first semiconductor substrate, wherein at least a photodiode is formed in the first semiconductor substrate; a second semiconductor substrate, wherein at least a logic circuit is formed in the second semiconductor substrate, and wherein the first semiconductor substrate is bonded to the second semiconductor substrate, an insulation structure formed of an insulation material penetrating through at least a silicon layer of the first semiconductor substrate from a light receiving surface side, wherein the insulation material of the insulation structure includes at least one of hafnium oxide and silicon oxide, wherein the insulation structure is a chip surrounding guard ring disposed at a side of a scribe area, and wherein the insulation structure is disposed above a wiring layer of the second semiconductor substrate.