| 摘要 |
Included are: the third frame which is electrically connected to the first intermediate frame and is arranged above the first frame; the fourth frame which is electrically connected to the second intermediate frame and is arranged above the second frame; the electric source terminal part which is provided on an extension of the first frame; the ground terminal part which is provided on an extension of the fourth frame; and the output terminal part which is provided on an extension to which the second frame and the third frame are electrically joined, wherein the third frame and the fourth frame are arranged in parallel with each other, and the electric source terminal part, the ground terminal part and the output terminal part are arranged in a manner such that induced electric voltages, which are generated in the third frame and the fourth frame, become in reverse directions with each other. |
| 主权项 |
1. A semiconductor module for electric power, comprising:
a first frame where plural first transistors and first diodes are arranged; a second frame where plural second transistors and second diodes are arranged; a first intermediate frame which is adjacent to the first frame; a second intermediate frame which is adjacent to the second frame; a third frame which is electrically connected to the first intermediate frame, and is arranged above the first frame; a fourth frame which is electrically connected to the second intermediate frame, and is arranged above the second frame; an electric source terminal which is provided on an extension of the first frame; a ground terminal which is provided on an extension of the fourth frame; and an output terminal which is provided on an extension to which the second frame and the third frame are electrically joined, wherein a drain electrode of the first transistor is connected to the first frame, a source electrode of the first transistor and an anode electrode of the first diode are connected to the first intermediate frame with first connecting lines of metal, a drain electrode of the second transistor is connected to the second frame, a source electrode of the second transistor and an anode electrode of the second diode are connected to the second intermediate frame with second connecting lines of metal, in neighborhoods of the first transistor and the second transistor, gate terminals and source terminals are arranged, the first frame, the second frame, the first intermediate frame, the second intermediate frame, the third frame, and the fourth frame are all arranged on a heat radiating plate via an insulator which is configured with a resin-system material, and at least a part of each of the first frame, the second frame, the first intermediate frame, the second intermediate frame, the third frame, and the fourth frame is covered with a molding resin, and the third frame and the fourth frame are arranged in parallel with each other, and the electric source terminal, the ground terminal and the output terminal are arranged in a manner such that induced electric voltages, which are generated in the third frame and the fourth frame, become in reverse directions with each other. |
