发明名称 |
Semiconductor package and fabrication method thereof |
摘要 |
A fabrication method of a semiconductor package is disclosed, which includes the steps of: providing a semiconductor structure having a carrier, a circuit portion formed on the carrier and a plurality of semiconductor elements disposed on the circuit portion; disposing a lamination member on the semiconductor elements; forming an insulating layer on the circuit portion for encapsulating the semiconductor elements; and removing the carrier. The lamination member increases the strength between adjacent semiconductor elements so as to overcome the conventional cracking problem caused by a CTE mismatch between the semiconductor elements and the insulating layer when the carrier is removed. |
申请公布号 |
US9520304(B2) |
申请公布日期 |
2016.12.13 |
申请号 |
US201314074148 |
申请日期 |
2013.11.07 |
申请人 |
Siliconware Precision Industries Co., Ltd. |
发明人 |
Chang Hong-Da;Lai Yi-Che;Chiu Chi-Hsin;Chiu Shih-Kuang |
分类号 |
H01L23/28;H01L21/48;H01L23/00;H01L23/538;H01L23/31;H01L21/56 |
主分类号 |
H01L23/28 |
代理机构 |
Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. |
代理人 |
Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F.;Jensen Steven M. |
主权项 |
1. A semiconductor package, comprising:
a circuit portion having opposite first and second sides; a plurality of semiconductor chips disposed on the first side of the circuit portion; a lamination member disposed on the semiconductor chips so as to increase a strength between the semiconductor chips, wherein the lamination member is a dummy die; and an insulating layer formed on the first side of the circuit portion for encapsulating the semiconductor chips. |
地址 |
Taichung TW |