Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems

摘要

Systems and methods for depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film includes arranging a substrate in a processing chamber; supplying a carrier gas to the processing chamber; supplying a hydrocarbon precursor gas or a silicon precursor gas to the processing chamber, respectively; supplying a metal-based precursor gas to the processing chamber; one of creating or supplying plasma in the processing chamber; and depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film on the substrate, respectively.

主权项

1. A method for depositing a metal-doped amorphous carbon hardmask film, comprising:
arranging a substrate on a pedestal in a processing chamber; supplying a carrier gas to the processing chamber; supplying a hydrocarbon precursor gas to the processing chamber; supplying a metal-based precursor gas to the processing chamber; providing, to the pedestal, first RF power at a first frequency; providing, to the pedestal, second RF power at a second frequency less than the first frequency; one of creating plasma in or supplying plasma to the processing chamber; and depositing a metal-doped amorphous carbon hardmask film on the substrate, wherein the carbon hardmask film includes metal carbide.