发明名称 Microwave emission mechanism, microwave plasma source and surface wave plasma processing apparatus
摘要 A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is λ0, a length of the closed circuit is nλ0±δ, where n is a positive integer and δ is a fine-tuning component including 0.
申请公布号 US9520272(B2) 申请公布日期 2016.12.13
申请号 US201214373589 申请日期 2012.12.14
申请人 TOKYO ELECTRON LIMITED 发明人 Ikeda Taro;Miyashita Hiroyuki;Osada Yuki;Fujino Yutaka;Komatsu Tomohito
分类号 H01Q1/26;H01J37/32;H05H1/46 主分类号 H01Q1/26
代理机构 代理人
主权项 1. A microwave emission mechanism for emitting into a chamber a microwave generated by a microwave generation mechanism, in a plasma processing apparatus for performing plasma processing by generating a surface wave plasma in the chamber, the microwave emission mechanism comprising: a transmission path through which the microwave is transmitted, the transmission path comprising a cylindrical outer conductor and an inner conductor coaxially disposed within the outer conductor; and an antenna section configured to emit into the chamber the microwave transmitted through the transmission path, wherein the antenna section comprises: an antenna having a slot through which the microwave is emitted; and a dielectric member through which the microwave emitted from the antenna is transmitted, a surface wave being formed on a surface of the dielectric member; wherein a closed circuit is operable to form with current flowing in an inner wall of the slot and the dielectric member, wherein the current comprises surface current and displacement current, and wherein, when a wavelength of the microwave is λ0, a length of the closed circuit is configured to equal nλ0±δ, wherein n is a positive integer and δ is a fine-tuning component including 0, wherein the length of the closed circuit is based on a height of the slot, a thickness of the dielectric member, and a lateral distance between the slot and the dielectric member.
地址 Tokyo JP