Double gate static induction thyristor and method for manufacturing the same.

摘要

A double gate static induction thyristor comprises an n semiconductor substrate having first and second principal surfaces opposite to each other. An n- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p- epitaxial semiconductor layer is formed on the second principal surface of the substrate. A cathode electrode is deposited on the surface of the n- epitaxial layer, and an anode electrode is deposited on the surface of the p- epitaxial layer. In addition, a first gate electrode is formed on the first principal surface of the substrate, and a second gate electrode is formed on the second principal surface of the substrate.