发明名称 |
CMOS Current sense amplifiers. |
摘要 |
<p>A CMOS current sense amplifier circuit for providing a high speed of operation includes a sense amplifier, a dummy sense amplifier and an operational sense amplifier. A memory array is formed of a plurality of core transistors which are arranged in a plurality of rows of word lines and a plurality of columns of bit-lines. A dummy bit-line is formed of a plurality of core transistors which are arranged in parallel along the rows of word lines. A first pass transistor and a plurality of Y-pass transistors are coupled between the sense amplifier and the memory array. Second and third pass transistors are coupled between the dummy sense amplifier and the dummy bit-line. A plurality of N-channel MOS transistors are used to clamp all of the bit-lines ih the array and dummy bit-line to a ground potential. The operational sense amplifier is responsive to the sense amplifier, dummy sense amplifier and the clamping transistors for generating an output signal which has a fast response time when making a low-to-high transition (that is when selecting an unprogrammed memory cell).</p> |
申请公布号 |
EP0199501(A2) |
申请公布日期 |
1986.10.29 |
申请号 |
EP19860302648 |
申请日期 |
1986.04.10 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
VENKATESH, BHIMACHAR |
分类号 |
G11C11/419;G11C7/00;G11C7/06;G11C7/14;G11C16/06;G11C17/00;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/419 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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